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A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics

Identifieur interne : 002093 ( Main/Repository ); précédent : 002092; suivant : 002094

A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics

Auteurs : RBID : Pascal:12-0175398

Descripteurs français

Pascal (Inist)
- Recuit thermique, Dépôt pulvérisation, Structure cristalline, Caractéristique électrique, Couche mince, Couche mince amorphe, Pulvérisation irradiation, Propriété électrique, Densité porteur charge, Cristallisation, Mécanisme croissance, Cristallite, Orientation préférentielle, Germe cristallin, Oxyde d'indium, Oxyde d'étain, Nitrure de titane, Mobilité porteur charge, Température recuit, Ségrégation, Joint grain, Défaut cristallin, Conductivité électrique, 8115C, 7350, 6855A, 6855J.

English descriptors

KwdEn :
- Amorphous thin film, Annealing temperature, Carrier density, Carrier mobility, Crystal defects, Crystal seeds, Crystal structure, Crystallites, Crystallization, Electrical characteristic, Electrical conductivity, Electrical properties, Grain boundaries, Growth mechanism, Indium oxide, Preferred orientation, Segregation, Sputter deposition, Sputtering, Thermal annealing, Thin films, Tin oxide, Titanium nitride.

Abstract

Thin films of amorphous indium tin oxide were deposited by soft sputtering. The film was gradually annealed in air at temperatures from 110 °C to 150 °C. Its structural and electrical properties were monitored in order to get a better understanding of the annealing process. Firstly, carrier density decreases by oxygen intake. Crystallization speeds up at 150 °C, with a 2.5 D growth of crystallites. The preferred orientations come from sputtering induced seeds. Then, the carrier density increases again due to tin activation. Meanwhile, the carrier mobility is more damaged by the low temperature annealing in air than by a standard annealing in a reducing atmosphere. Thus, tin oxide segregation is suspected at grain boundaries.

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Pascal:12-0175398

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics</title>
<author><name sortKey="Legeay, G" uniqKey="Legeay G">G. Legeay</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>IETR, UMR-CNRS 6164, IUT de Saint-Brieuc/Université de Rennes 1, 18 rue Henry Wallon</s1>
<s2>22004 Saint-Brieuc</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Saint-Brieuc</settlement>
</placeName>
<orgName type="university">Université de Rennes 1</orgName>
</affiliation>
</author>
<author><name sortKey="Castel, X" uniqKey="Castel X">X. Castel</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>IETR, UMR-CNRS 6164, IUT de Saint-Brieuc/Université de Rennes 1, 18 rue Henry Wallon</s1>
<s2>22004 Saint-Brieuc</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Région Bretagne</region>
<settlement type="city">Saint-Brieuc</settlement>
</placeName>
<orgName type="university">Université de Rennes 1</orgName>
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<publicationStmt><idno type="inist">12-0175398</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0175398 INIST</idno>
<idno type="RBID">Pascal:12-0175398</idno>
<idno type="wicri:Area/Main/Corpus">001F50</idno>
<idno type="wicri:Area/Main/Repository">002093</idno>
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<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous thin film</term>
<term>Annealing temperature</term>
<term>Carrier density</term>
<term>Carrier mobility</term>
<term>Crystal defects</term>
<term>Crystal seeds</term>
<term>Crystal structure</term>
<term>Crystallites</term>
<term>Crystallization</term>
<term>Electrical characteristic</term>
<term>Electrical conductivity</term>
<term>Electrical properties</term>
<term>Grain boundaries</term>
<term>Growth mechanism</term>
<term>Indium oxide</term>
<term>Preferred orientation</term>
<term>Segregation</term>
<term>Sputter deposition</term>
<term>Sputtering</term>
<term>Thermal annealing</term>
<term>Thin films</term>
<term>Tin oxide</term>
<term>Titanium nitride</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Recuit thermique</term>
<term>Dépôt pulvérisation</term>
<term>Structure cristalline</term>
<term>Caractéristique électrique</term>
<term>Couche mince</term>
<term>Couche mince amorphe</term>
<term>Pulvérisation irradiation</term>
<term>Propriété électrique</term>
<term>Densité porteur charge</term>
<term>Cristallisation</term>
<term>Mécanisme croissance</term>
<term>Cristallite</term>
<term>Orientation préférentielle</term>
<term>Germe cristallin</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Nitrure de titane</term>
<term>Mobilité porteur charge</term>
<term>Température recuit</term>
<term>Ségrégation</term>
<term>Joint grain</term>
<term>Défaut cristallin</term>
<term>Conductivité électrique</term>
<term>8115C</term>
<term>7350</term>
<term>6855A</term>
<term>6855J</term>
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<front><div type="abstract" xml:lang="en">Thin films of amorphous indium tin oxide were deposited by soft sputtering. The film was gradually annealed in air at temperatures from 110 °C to 150 °C. Its structural and electrical properties were monitored in order to get a better understanding of the annealing process. Firstly, carrier density decreases by oxygen intake. Crystallization speeds up at 150 °C, with a 2.5 D growth of crystallites. The preferred orientations come from sputtering induced seeds. Then, the carrier density increases again due to tin activation. Meanwhile, the carrier mobility is more damaged by the low temperature annealing in air than by a standard annealing in a reducing atmosphere. Thus, tin oxide segregation is suspected at grain boundaries.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics</s1>
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<fA11 i1="01" i2="1"><s1>LEGEAY (G.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>CASTEL (X.)</s1>
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<fA14 i1="01"><s1>IETR, UMR-CNRS 6164, IUT de Saint-Brieuc/Université de Rennes 1, 18 rue Henry Wallon</s1>
<s2>22004 Saint-Brieuc</s2>
<s3>FRA</s3>
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<sZ>2 aut.</sZ>
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<fA20><s1>4021-4025</s1>
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<fA66 i1="01"><s0>NLD</s0>
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<fC01 i1="01" l="ENG"><s0>Thin films of amorphous indium tin oxide were deposited by soft sputtering. The film was gradually annealed in air at temperatures from 110 °C to 150 °C. Its structural and electrical properties were monitored in order to get a better understanding of the annealing process. Firstly, carrier density decreases by oxygen intake. Crystallization speeds up at 150 °C, with a 2.5 D growth of crystallites. The preferred orientations come from sputtering induced seeds. Then, the carrier density increases again due to tin activation. Meanwhile, the carrier mobility is more damaged by the low temperature annealing in air than by a standard annealing in a reducing atmosphere. Thus, tin oxide segregation is suspected at grain boundaries.</s0>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>13</s5>
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<fC03 i1="13" i2="X" l="ENG"><s0>Preferred orientation</s0>
<s5>13</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Orientación preferencial</s0>
<s5>13</s5>
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<fC03 i1="14" i2="3" l="FRE"><s0>Germe cristallin</s0>
<s5>14</s5>
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<fC03 i1="14" i2="3" l="ENG"><s0>Crystal seeds</s0>
<s5>14</s5>
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<s5>15</s5>
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<s5>15</s5>
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<fC03 i1="15" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>15</s5>
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<s5>16</s5>
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<s5>16</s5>
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<s5>16</s5>
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<s5>17</s5>
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<s5>17</s5>
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<fC03 i1="17" i2="X" l="SPA"><s0>Titanio nitruro</s0>
<s5>17</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>Mobilité porteur charge</s0>
<s5>29</s5>
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<s5>29</s5>
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<s5>30</s5>
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<s5>30</s5>
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<s5>30</s5>
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<s5>31</s5>
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<s5>31</s5>
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<s5>32</s5>
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<fC03 i1="21" i2="3" l="ENG"><s0>Grain boundaries</s0>
<s5>32</s5>
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<s5>33</s5>
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<s5>33</s5>
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<s5>34</s5>
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<s5>34</s5>
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<fC03 i1="24" i2="3" l="FRE"><s0>8115C</s0>
<s4>INC</s4>
<s5>71</s5>
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<fC03 i1="25" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>72</s5>
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<fC03 i1="26" i2="3" l="FRE"><s0>6855A</s0>
<s4>INC</s4>
<s5>73</s5>
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<s4>INC</s4>
<s5>74</s5>
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</fN21>
<fN44 i1="01"><s1>OTO</s1>
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A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics

A gradual annealing of amorphous sputtered indium tin oxide: Crystalline structure and electrical characteristics

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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